Obtained his M.E. and Ph.D. degrees in electrical engineering from “Institut National des Sciences Appliquées” in 2013 and 2016 respectively. From 2013 to 2018 he has been with “Ampère Laboratory”, where his main activities were Silicon Carbide Semiconductor device characterization, modelling and reliability. In 2018 he was a visiting researcher at PEMC University of Nottingham for a 6-month period, where he was involved in SiC MOSFET gate oxide reliability research. From 2019, he is with SuperGrid Institute. His activities are related to the active balancing of switching cells and power semiconductor device characterisation/modelling/reliability and Medium Voltage Converter design.